Invention Grant
US09406657B2 Semiconductor light-emitting device 有权
半导体发光装置

Semiconductor light-emitting device
Abstract:
A semiconductor light-emitting device has a substrate, one or more semiconductor light-emitting elements provided on the substrate, and that emit light having a peak wavelength in a 380 nm to 480 nm wavelength region, and a molded member covering the semiconductor light-emitting element, and containing a phosphor that emits visible light by being excited by the emitted light from the semiconductor light-emitting element. The molded member is formed so that index A=H/(s/n) satisfies 0.3≦A≦6, where H is the height [mm] of the molded member from the substrate, s is the square root [mm] of the contact area between the substrate and the molded member, and n is the number of the semiconductor light-emitting elements covered with the molded member.
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