发明授权
US09406661B2 Protection circuit including vertical gallium nitride schottky diode and PN junction diode
有权
保护电路包括垂直氮化镓肖特基二极管和PN结二极管
- 专利标题： Protection circuit including vertical gallium nitride schottky diode and PN junction diode
- 专利标题（中）： 保护电路包括垂直氮化镓肖特基二极管和PN结二极管
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申请号： US14632352申请日： 2015-02-26
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公开(公告)号： US09406661B2公开(公告)日： 2016-08-02
- 发明人: TingGang Zhu , Anup Bhalla , Ping Huang , Yueh-Se Ho
- 申请人： Alpha and Omega Semiconductor Incorporated
- 申请人地址： US CA Sunnyvale
- 专利权人： Alpha and Omega Semiconductor Incorporated
- 当前专利权人： Alpha and Omega Semiconductor Incorporated
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Van Pelt, Yi & James LLP
- 主分类号： H01L25/18
- IPC分类号： H01L25/18 ; H01L29/66 ; H01L29/872 ; H01L29/861 ; H01L29/20 ; H01L29/40 ; H01L23/00
摘要：
A circuit includes a vertical conduction gallium nitride-based Schottky diode and a vertical conduction silicon based PN junction diode connected in parallel. The Schottky diode and the PN junction diode are packaged in the same semiconductor package and the PN junction diode does not conduct in response to the Schottky diode being forward biased. In some embodiments, the silicon based PN junction diode has a breakdown voltage lower than a breakdown voltage of the gallium nitride-based Schottky diode. The silicon based PN junction diode enters breakdown in response to the gallium nitride-based Schottky diode being reverse biased to divert a reverse bias avalanche current away from the gallium nitride-based Schottky diode.
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