发明授权
US09406674B2 Integrated III-nitride D-mode HFET with cascoded pair half bridge
有权
具有级联双桥半桥的III型氮化物D模HFET
- 专利标题： Integrated III-nitride D-mode HFET with cascoded pair half bridge
- 专利标题（中）： 具有级联双桥半桥的III型氮化物D模HFET
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申请号： US14326333申请日： 2014-07-08
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公开(公告)号： US09406674B2公开(公告)日： 2016-08-02
- 发明人: Michael A. Briere
- 申请人： International Rectifier Corporation
- 申请人地址： US CA El Segundo
- 专利权人： Infineon Technologies Americas Corp.
- 当前专利权人： Infineon Technologies Americas Corp.
- 当前专利权人地址： US CA El Segundo
- 代理机构： Farjami & Farjami LLP
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H03K17/10 ; H03K17/22 ; H03K17/567 ; H01L27/06 ; H01L25/07
摘要：
There are disclosed herein various implementations of a group III-V power conversion circuit including a monolithically integrated half bridge having a depletion mode III-Nitride field-effect transistor (FET), and a normally OFF composite cascoded switch including a depletion mode III-Nitride FET and an enhancement mode group IV FET. In one exemplary implementation, the monolithically integrated half bridge includes a high side depletion mode III-Nitride FET having an enable switch coupled in the conduction path of the high side depletion mode III-Nitride FET.
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