Invention Grant
US09406811B2 Nonvolatile semiconductor memory device including a charge storage layer formed on first and second insulating layers
有权
包括形成在第一和第二绝缘层上的电荷存储层的非易失性半导体存储器件
- Patent Title: Nonvolatile semiconductor memory device including a charge storage layer formed on first and second insulating layers
- Patent Title (中): 包括形成在第一和第二绝缘层上的电荷存储层的非易失性半导体存储器件
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Application No.: US14284638Application Date: 2014-05-22
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Publication No.: US09406811B2Publication Date: 2016-08-02
- Inventor: Masaaki Higuchi , Yoshio Ozawa , Katsuyuki Sekine , Ryota Fujitsuka
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-194542 20090825
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/66 ; H01L29/423 ; H01L21/28 ; H01L29/51
Abstract:
According to one embodiment, a nonvolatile semiconductor memory device including a semiconductor layer with a main surface, a first insulating layer formed on the main surface of the semiconductor layer, a charge storage layer formed on the first insulating layer, a second insulating layer formed on the charge storage layer, and a control gate electrode formed on the second insulating layer. At least one inelastic scattering film that reduces energy of electrons by scattering is contained in at least one of the charge storage layer and second insulating layer.
Public/Granted literature
- US20140252453A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-09-11
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