Invention Grant
- Patent Title: Light emitting diode with light emitting layer containing nitrogen and phosphorus
- Patent Title (中): 具有氮和磷的发光层的发光二极管
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Application No.: US14411926Application Date: 2013-06-24
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Publication No.: US09406835B2Publication Date: 2016-08-02
- Inventor: Stephane Turcotte
- Applicant: KONINKLIJKE PHILIPS N.V.
- Applicant Address: NL Eindhoven
- Assignee: Koninklijke Philips N.V.
- Current Assignee: Koninklijke Philips N.V.
- Current Assignee Address: NL Eindhoven
- International Application: PCT/IB2013/055161 WO 20130624
- International Announcement: WO2014/006531 WO 20140109
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/06 ; H01L33/12 ; H01L33/32 ; H01L33/30
Abstract:
Embodiments of the invention include an n-type region, a p-type region, and a light emitting layer disposed between the n-type region and the p-type region. The light emitting layer is a III-V material comprising nitrogen and phosphorus. The device also includes a graded region disposed between the light emitting layer and one of the p-type region and the n-type region. The composition of materials in the graded region is graded.
Public/Granted literature
- US20150214421A1 LIGHT EMITTING DIODE WITH LIGHT EMITTING LAYER CONTAINING NITROGEN AND PHOSPHORUS Public/Granted day:2015-07-30
Information query
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