Invention Grant
US09411024B2 Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy
有权
磁场传感器在全桥电路中具有XMR元件，其具有共享相同形状各向异性的对角线元件
- Patent Title: Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy
- Patent Title (中): 磁场传感器在全桥电路中具有XMR元件，其具有共享相同形状各向异性的对角线元件
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Application No.: US13451737Application Date: 2012-04-20
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Publication No.: US09411024B2Publication Date: 2016-08-09
- Inventor: Wolfgang Raberg
- Applicant: Wolfgang Raberg
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: G01R33/09
- IPC: G01R33/09
Abstract:
Embodiments of the present invention provide a magnetic field sensor. The magnetic field sensor includes at least four XMR elements connected in a full bridge circuit including parallel branches. The at least four XMR elements are GMR or TMR elements (GMR=giant magnetoresistance; TMR=tunnel magnetoresistance). Two diagonal XMR elements of the full bridge circuit include the same shape anisotropy, wherein XMR elements in the same branch of the full bridge circuit include different shape anisotropies.
Public/Granted literature
- US20130278250A1 MAGNETIC FIELD SENSOR Public/Granted day:2013-10-24
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