Invention Grant
US09411049B2 Proximity sensor having array of geiger mode avalanche photodiodes for estimating distance of an object to the array based on at least one of a dark current and a rate of current spikes generated in dark conditions 有权
接近传感器具有阵列的盖格模式雪崩光电二极管,用于基于暗电流和在黑暗条件下产生的电流尖峰率中的至少一种来估计物体与阵列的距离

Proximity sensor having array of geiger mode avalanche photodiodes for estimating distance of an object to the array based on at least one of a dark current and a rate of current spikes generated in dark conditions
Abstract:
A proximity sensor may include an array of Geiger mode avalanche photodiodes, each including an anode contact and a cathode contact. A common cathode contact may be coupled to the cathode contacts of the array to define a first connection lead at a back side of the array. A common anode collecting grid contact may be coupled to the anode contacts of the array to define a second connection lead of the array. Circuitry may be coupled with the first and second connection leads and configured to sense at least one of a dark current and a rate of current spikes generated in dark conditions, and generate an output signal representing an estimated distance of an object from the array upon the sensing.
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