发明授权
- 专利标题： Semiconductor device, electronic device, and semiconductor device manufacturing method
- 专利标题（中）： 半导体器件，电子器件和半导体器件制造方法
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申请号： US14508736申请日： 2014-10-07
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公开(公告)号： US09412715B2公开(公告)日： 2016-08-09
- 发明人: Kozo Shimizu , Seiki Sakuyama , Toshiya Akamatsu
- 申请人： FUJITSU LIMITED
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 代理机构： Kratz, Quintos & Hanson, LLP
- 优先权： JP2011-221364 20111005; JP2012-178509 20120810
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/498 ; H01L21/50 ; H01L25/065 ; H01L23/31 ; H01L23/538
摘要：
A semiconductor device, includes: a connection member including a first pad formed on a principal surface thereof; a semiconductor chip including a circuit-formed surface on which a second pad is formed, the chip mounted on the connection member so that the circuit-formed surface faces the principal surface; and a solder bump that connects the first and second pads and is made of metal containing Bi and Sn, wherein the bump includes a first interface-layer formed adjacent to the second pad, a second interface-layer formed adjacent to the first pad, a first intermediate region formed adjacent to either one of the interface-layers, and a second intermediate region formed adjacent to the other one of the interface-layers and formed adjacent to the first intermediate region; Bi-concentration in the first intermediate region is higher than a Sn-concentration; and a Sn-concentration in the second intermediate region is higher than a Bi-concentration.
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