Invention Grant
US09412748B2 Method of manufacturing semiconductor device having an implanting from a second direction inclined relative to a first direction
有权
具有从相对于第一方向倾斜的第二方向进行注入的半导体器件的制造方法
- Patent Title: Method of manufacturing semiconductor device having an implanting from a second direction inclined relative to a first direction
- Patent Title (中): 具有从相对于第一方向倾斜的第二方向进行注入的半导体器件的制造方法
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Application No.: US14829605Application Date: 2015-08-18
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Publication No.: US09412748B2Publication Date: 2016-08-09
- Inventor: Tomohiro Hayashi , Yoshiyuki Kawashima
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2014-174573 20140828
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/115 ; H01L21/266 ; H01L21/265 ; H01L21/3213 ; H01L29/66 ; H01L21/02 ; H01L21/28 ; H01L29/423
Abstract:
An improvement is achieved in the performance of a semiconductor device. In a method of manufacturing the semiconductor device, using a control gate electrode and a memory gate electrode which are formed over a semiconductor substrate as a mask, n-type impurity ions are implanted from a direction perpendicular to a main surface of the semiconductor substrate. Then, using the control gate electrode, the memory gate electrode, and first and second sidewall spacers as a mask, other n-type impurity ions are implanted from a direction inclined relative to the direction perpendicular to the main surface of the semiconductor substrate.
Public/Granted literature
- US20160064397A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-03-03
Information query
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