Invention Grant
- Patent Title: Method of manufacturing a light emitting device and thin film forming apparatus
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Application No.: US14626122Application Date: 2015-02-19
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Publication No.: US09412948B2Publication Date: 2016-08-09
- Inventor: Hirokazu Yamagata , Yoshimi Adachi , Noriko Shibata
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2000-400168 20001228
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L51/00 ; H01L51/52 ; H01L51/56

Abstract:
A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
Public/Granted literature
- US20150171330A1 METHOD OF MANUFACTURING A LIGHT EMITTING DEVICE AND THIN FILM FORMING APPARATUS Public/Granted day:2015-06-18
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