发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14738582申请日： 2015-06-12
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公开(公告)号： US09415999B2公开(公告)日： 2016-08-16
- 发明人: Chao Zheng , Wei Wang
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation
- 申请人地址： CN
- 专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人地址： CN
- 代理机构： Innovation Counsel LLP
- 优先权： CN201410370667 20140730
- 主分类号： B81B7/00
- IPC分类号： B81B7/00
摘要：
A semiconductor device includes a bottom substrate, wherein a front-end device including a microelectromechanical systems (MEMS) device and an inductor is disposed on the bottom substrate, and a top substrate bonded to the bottom substrate so as form a cavity enclosing the front-end device. The semiconductor device further includes an adsorption layer disposed on a portion of the top substrate facing the front-end device, wherein the adsorption layer and the inductor do not overlap in a vertical direction.
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