Invention Grant
- Patent Title: Capacitive sensor device and method of manufacture
- Patent Title (中): 电容式传感器装置及其制造方法
-
Application No.: US13665192Application Date: 2012-10-31
-
Publication No.: US09417048B2Publication Date: 2016-08-16
- Inventor: David Richard Esler , Emad Andarawis Andarawis , Wayne Charles Hasz , Mahadevan Balasubramaniam
- Applicant: General Electric Company
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent Pabrita K. Chakrabarti
- Main IPC: F01D11/20
- IPC: F01D11/20 ; G01B7/14

Abstract:
A capacitive sensor device and a method of manufacture are provided. The capacitive sensor device includes at least one sensor tip that includes an electrode positioned at a first end of the sensor tip, and a stem member coupled to the electrode and extending toward a second end of the sensor tip. The device also includes a coaxial cable including a center conductor, the center conductor coupled to the sensor tip at the second end, and an insulation layer supporting the sensor tip between the first and second ends. The insulation layer includes a metallization on a portion surrounding the second end of the sensor tip. The device further includes a casing surrounding a portion of the coaxial cable, the metallization, and the coupling of the center conductor and the sensor tip, wherein a braze joint is formed between the casing and the metallization to form a hollow, hermetic cavity.
Public/Granted literature
- US20140119884A1 Capacitive Sensor Device and Method of Manufacture Public/Granted day:2014-05-01
Information query