Invention Grant
- Patent Title: Semiconductor device manufacturing method and substrate treatment system
- Patent Title (中): 半导体器件制造方法和衬底处理系统
-
Application No.: US14504915Application Date: 2014-10-02
-
Publication No.: US09418837B2Publication Date: 2016-08-16
- Inventor: Koji Akiyama , Hirokazu Higashijima , Chihiro Tamura , Shintaro Aoyama , Yu Wamura
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2012-086578 20120405
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/56 ; H01L21/67 ; C23C16/40 ; H01L21/28 ; H01L29/51 ; C23C16/06 ; C23C16/46 ; C23C16/52 ; H01L29/40 ; H01L49/02
Abstract:
A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.
Public/Granted literature
- US20150017813A1 Semiconductor Device Manufacturing Method and Substrate Treatment System Public/Granted day:2015-01-15
Information query
IPC分类:
