发明授权
- 专利标题： Semiconductor device with multiple carrier channels
- 专利标题（中）： 具有多载波通道的半导体器件
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申请号： US14841940申请日： 2015-09-01
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公开(公告)号： US09419121B1公开(公告)日： 2016-08-16
- 发明人: Koon Hoo Teo , Yuhao Zhang
- 申请人： Mitsubishi Electric Research Laboratories, Inc.
- 申请人地址： US MA Cambridge
- 专利权人： Mitsubishi Electric Research Laboratories, Inc.
- 当前专利权人： Mitsubishi Electric Research Laboratories, Inc.
- 当前专利权人地址： US MA Cambridge
- 代理商 Gene Vinokur; James McAleenan; Hironori Tsukamoto
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L29/423 ; H01L29/417 ; H01L29/40 ; H01L29/66
摘要：
A semiconductor device includes a layered structure forming multiple carrier channels extending in parallel at different depths of the semiconductor device and a gate electrode having multiple gate fingers of different lengths penetrating the layered structure to reach and control corresponding carrier channels at the different depths. The semiconductor device also includes a carrier electrode having multiple carrier fingers of different lengths penetrating the layered structure to access the corresponding carrier channels. The carrier fingers are interdigitated with the gate fingers.
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