发明授权
US09419214B2 Target, method for producing the same, memory, and method for producing the same 有权
目的,制造方法,记忆及其制造方法

Target, method for producing the same, memory, and method for producing the same
摘要:
A target including: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element selected from the group consisting of S, Se, and Te. And a method for producing the target.
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