发明授权
- 专利标题： Semiconductor device, related manufacturing method, and related electronic device
- 专利标题（中）： 半导体器件，相关制造方法及相关电子器件
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申请号： US14738513申请日： 2015-06-12
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公开(公告)号： US09425068B2公开(公告)日： 2016-08-23
- 发明人: Chao Zheng
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation
- 申请人地址： CN Shanghai
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址： CN Shanghai
- 代理机构： Innovation Counsel LLP
- 优先权： CN201410370709 20140730
- 主分类号： H01L23/04
- IPC分类号： H01L23/04 ; H01L23/06 ; H01L23/26 ; H01L21/54 ; H01L21/50
摘要：
A method for manufacturing semiconductor device may include the following steps: performing an etching process to remove a sacrificial layer from a first composite structure, wherein the first composite structure includes a first substrate structure; performing a heat treatment to release a gas from the first composite structure; performing a cleaning process to remove an oxide layer from the first composite structure; and combining the first composite structure with a second composite structure that includes a second substrate structure and an electronic component positioned on the second substrate substructure, such that the first substrate structure is combined with the second substrate structure to form an enclosure structure that encloses the electronic component.
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