发明授权
US09425106B1 Methods of performing fin cut etch processes for taper FinFET semiconductor devices and the resulting devices
有权
对锥形FinFET半导体器件和所产生的器件执行鳍切割蚀刻工艺的方法
- 专利标题： Methods of performing fin cut etch processes for taper FinFET semiconductor devices and the resulting devices
- 专利标题（中）： 对锥形FinFET半导体器件和所产生的器件执行鳍切割蚀刻工艺的方法
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申请号： US14674108申请日： 2015-03-31
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公开(公告)号： US09425106B1公开(公告)日： 2016-08-23
- 发明人: Ruilong Xie , Min Gyu Sung , Chanro Park , Hoon Kim
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/8238 ; H01L21/311 ; H01L21/768 ; H01L29/78 ; H01L29/66 ; H01L21/306 ; H01L21/321 ; H01L21/3213 ; H01L21/8234 ; H01L21/84
摘要：
A method includes forming a plurality of fins above a substrate. At least one dielectric material is formed above and between the plurality of fins. A mask layer is formed above the dielectric material. The mask layer has an opening defined therein. A portion of the at least one dielectric material exposed by the opening is removed to expose top and sidewall surface portions of at least a subset of the fins. An etching process is performed to remove the portions of the fins in the subset exposed by removing the portion of the at least one dielectric material.
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