发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13634212申请日： 2011-04-01
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公开(公告)号： US09425147B2公开(公告)日： 2016-08-23
- 发明人: Yuichi Nakao , Tadao Ohta
- 申请人： Yuichi Nakao , Tadao Ohta
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2010-085193 20100401
- 国际申请： PCT/JP2011/058400 WO 20110401
- 国际公布： WO2011/125928 WO 20111013
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/768 ; H01L23/532 ; H01L23/528 ; H01L23/31 ; H01L23/00
摘要：
A semiconductor device includes an interlayer insulating film; a wiring formed on the interlayer insulating film so as to protrude there from and made of a material having copper as a main component, the wiring having a thickness direction and having a cross sectional shape of an inverted trapezoid that becomes wider in width with distance away from the interlayer insulating film; and a passivation film formed so as to cover the wiring. The passivation film is made of a laminated film in which a first nitride film, an intermediate film, and a second nitride film are laminated in that order from the wiring side. The intermediate film is made of an insulating material differing from those of the first and second nitride films, and has a tapered portion having a cross sectional shape of a trapezoid that becomes narrower in width with distance away from the interlayer insulating film.
公开/授权文献
- US20130001785A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 公开/授权日：2013-01-03
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