Invention Grant
- Patent Title: Vertical tunnel field effect transistor
- Patent Title (中): 垂直隧道场效应晶体管
-
Application No.: US14021795Application Date: 2013-09-09
-
Publication No.: US09425296B2Publication Date: 2016-08-23
- Inventor: Xia Li , Ming Cai , Bin Yang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/739

Abstract:
A tunnel field transistor (TFET) device includes a fin structure that protrudes from a substrate surface. The fin structure includes a base portion proximate to the substrate surface, a top portion, and a first pair of sidewalls extending from the base portion to the top portion. The first pair of sidewalls has a length corresponding to a length of the fin structure. The fin structure also includes a first doped region having a first dopant concentration at the base portion of the fin structure. The fin structure also includes a second doped region having a second dopant concentration at the top portion of the fin structure. The TFET device further includes a gate including a first conductive structure neighboring a first sidewall of the first pair of sidewalls. A dielectric layer electrically isolates the first conductive structure from the first sidewall.
Public/Granted literature
- US20150069458A1 VERTICAL TUNNEL FIELD EFFECT TRANSISTOR Public/Granted day:2015-03-12
Information query
IPC分类: