- 专利标题: Memory device and memory system
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申请号: US14611687申请日: 2015-02-02
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公开(公告)号: US09425828B2公开(公告)日: 2016-08-23
- 发明人: Man-keun Seo , Jun-jin Kong , Kyoung-Lae Cho
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley, P.A.
- 优先权: KR10-2011-0016028 20110223
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; H03M13/29 ; H03M7/30 ; H03M13/05 ; G06F11/10 ; H03M13/00
摘要:
A memory device and a memory system, the memory system including a data compressor for generating compressed data by compressing program data in a first unit, and an error correction block generator for dividing the compressed data in a second unit to obtain a plurality of pieces of normal data, and generating error correction blocks for correcting errors of the plurality of pieces of normal data, wherein each of the error correction blocks comprises the normal data, invalid data having a size corresponding to the size of the normal data, and parities for the normal data and the invalid data.
公开/授权文献
- US20150149852A1 MEMORY DEVICE AND MEMORY SYSTEM 公开/授权日:2015-05-28
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