A method for simulating, in an electrical device simulator, electrical behavior of an integrated diode is described. The diode is modelled using a compact model in the electrical device simulator to determine the electrical behavior of the diode in a given situation. The modelling includes modelling a series resistance relating to the active regions and to the connections, modelling a PN junction of the diode, and modelling a well resistance for positive values of a current passing through the diode involving a conductivity modulation model. The method further includes modelling of the well resistance for negative values of the current by a curve which increases steeply from an initial resistance value corresponding to a zero value of current up to a plateau.