Integrated circuits and methods for producing the same are provided. A method for producing an integrated circuit includes forming an interconnect trench in a dielectric layer, and forming a conformal barrier layer overlying the dielectric layer and within the interconnect trench. A barrier spacer is formed by removing the conformal barrier layer from an interconnect trench bottom, and an interconnect is formed within the interconnect trench after forming the barrier spacer. An air gap trench is formed in the dielectric layer adjacent to the barrier spacer, and a top cap is formed overlying the interconnect and the air gap trench, where the top cap bridges the air gap trench to produce an air gap in the air gap trench.