Invention Grant
US09431410B2 Methods and apparatuses having memory cells including a monolithic semiconductor channel
有权
具有包括单片半导体通道的存储单元的方法和装置
- Patent Title: Methods and apparatuses having memory cells including a monolithic semiconductor channel
- Patent Title (中): 具有包括单片半导体通道的存储单元的方法和装置
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Application No.: US14069574Application Date: 2013-11-01
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Publication No.: US09431410B2Publication Date: 2016-08-30
- Inventor: Jie Sun , Zhenyu Lu , Roger W. Lindsay , Brian Cleereman , John Hopkins , Hongbin Zhu , Fatma Arzum Simsek-Ege , Prasanna Srinivasan , Purnima Narayanan
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L27/115 ; H01L29/66
Abstract:
Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of memory cells forms a source material over a substrate. A capping material may be formed over the source material. A select gate material may be formed over the capping material. A plurality of charge storage structures may be formed over the select gate material in a plurality of alternating levels of control gate and insulator materials. A first opening may be formed through the plurality of alternating levels of control gate and insulator materials, the select gate material, and the capping material. A channel material may be formed along the sidewall of the first opening. The channel material has a thickness that is less than a width of the first opening, such that a second opening is formed by the semiconductor channel material.
Public/Granted literature
- US20150123189A1 METHODS AND APPARATUSES HAVING MEMORY CELLS INCLUDING A MONOLITHIC SEMICONDUCTOR CHANNEL Public/Granted day:2015-05-07
Information query
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