Invention Grant
- Patent Title: Zinc blende cadmium—manganese—telluride with reduced hole compensation effects and methods for forming the same
- Patent Title (中): 具有减少孔补偿效应的锌闪锌矿镉锰碲化物及其形成方法
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Application No.: US14141408Application Date: 2013-12-26
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Publication No.: US09431569B2Publication Date: 2016-08-30
- Inventor: Sergey Barabash , Amir Bayati , Dipankar Pramanik , Zhi-Wen Sun
- Applicant: First Solar, Inc.
- Applicant Address: US AZ Tempe
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US AZ Tempe
- Agency: MacMillan, Sobanski & Todd, LLC
- Main IPC: C01B19/00
- IPC: C01B19/00 ; H01L35/16 ; H01L31/18
Abstract:
Embodiments provided herein describe methods for forming cadmium-manganese-telluride (CMT), such as for use in photovoltaic devices. A substrate including a material with a zinc blend crystalline structure is provided. CMT is formed above the substrate. During the formation of the CMT, cation-rich processing conditions are maintained. The resulting CMT may be more readily provided with p-type dopants when compared to conventionally-formed CMT.
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