Invention Grant
- Patent Title: Methods of forming semiconductor device structures
- Patent Title (中): 形成半导体器件结构的方法
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Application No.: US14546897Application Date: 2014-11-18
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Publication No.: US09431605B2Publication Date: 2016-08-30
- Inventor: Scott E. Sills , Dan B. Millward
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L45/00
Abstract:
A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described.
Public/Granted literature
- US20150076436A1 METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES Public/Granted day:2015-03-19
Information query
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