发明授权
- 专利标题: Composition for forming photosensitive resist underlayer film
- 专利标题(中): 用于形成光敏抗蚀剂下层膜的组合物
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申请号: US13516304申请日: 2010-12-06
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公开(公告)号: US09436085B2公开(公告)日: 2016-09-06
- 发明人: Yusuke Horiguchi , Makiko Umezaki , Noriaki Fujitani , Hirokazu Nishimaki , Takahiro Kishioka , Takahiro Hamada
- 申请人: Yusuke Horiguchi , Makiko Umezaki , Noriaki Fujitani , Hirokazu Nishimaki , Takahiro Kishioka , Takahiro Hamada
- 申请人地址: JP Tokyo
- 专利权人: NISSAN CHEMICAL INDUSTRIES, LTD.
- 当前专利权人: NISSAN CHEMICAL INDUSTRIES, LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2009-285573 20091216
- 国际申请: PCT/JP2010/071816 WO 20101206
- 国际公布: WO2011/074433 WO 20110623
- 主分类号: G03F7/09
- IPC分类号: G03F7/09 ; G03F7/30 ; G03F7/32 ; C08F12/24 ; C08F212/14 ; C08F220/56 ; G03F7/038
摘要:
A composition for forming a resist underlayer film to be used in a lithography process, that includes: a polymer containing unit structures of Formula (1), Formula (2), and Formula (3): the polymer being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20≦a≦0.90, the unit structure of Formula (2) has a ratio of mole number (b) within a range of 0.05≦b≦0.60, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001≦c≦0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer having a weight average molecular weight of 3,000 to 100,000; a crosslinkable compound; a photoacid generator; and a solvent.
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