发明授权
US09437443B2 Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitrides
有权
使用ALD金属，金属氧化物和金属氮化物的低温侧壁图像转印工艺
- 专利标题： Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitrides
- 专利标题（中）： 使用ALD金属，金属氧化物和金属氮化物的低温侧壁图像转印工艺
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申请号： US13916109申请日： 2013-06-12
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公开(公告)号： US09437443B2公开(公告)日： 2016-09-06
- 发明人: Markus Brink , Michael A. Guillorn , Sebastian U. Engelmann , Hiroyuki Miyazoe , Adam M. Pyzyna , Jeffrey W. Sleight
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Roberts Mlotkowski Safran Cole & Calderon P.C.
- 代理商 Anthony Canale; Andrew M. Calderon
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/033 ; H01L21/02 ; H01L21/3213 ; H01L21/28
摘要：
A SIT method includes the following steps. An SIT mandrel material is deposited onto a substrate and formed into a plurality of SIT mandrels. A spacer material is conformally deposited onto the substrate covering a top and sides of each of the SIT mandrels. Atomic Layer Deposition (ALD) is used to deposit the SIT spacer at low temperatures. The spacer material is selected from the group including a metal, a metal oxide, a metal nitride and combinations including at least one of the foregoing materials. The spacer material is removed from all but the sides of each of the SIT mandrels to form SIT sidewall spacers on the sides of each of the SIT mandrels. The SIT mandrels are removed selective to the SIT sidewall spacers revealing a pattern of the SIT sidewall spacers. The pattern of the SIT sidewall spacers is transferred to the underlying stack or substrate.
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