Invention Grant
US09437539B2 Dielectric region in a bulk silicon substrate providing a high-Q passive resonator
有权
提供高Q无源谐振器的体硅衬底中的介电区域
- Patent Title: Dielectric region in a bulk silicon substrate providing a high-Q passive resonator
- Patent Title (中): 提供高Q无源谐振器的体硅衬底中的介电区域
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Application No.: US14830816Application Date: 2015-08-20
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Publication No.: US09437539B2Publication Date: 2016-09-06
- Inventor: James S. Dunn , Zhong-Xiang He , Qizhi Liu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb & Riley, LLC
- Agent Steven J. Meyers, Esq.
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/66 ; H01L49/02 ; H01L29/06 ; H01L21/762 ; H01L23/31 ; H01L23/528 ; H01L23/532 ; H01L29/16
Abstract:
Structures and methods of making a dielectric region in a bulk silicon (Si) substrate of a mixed-signal integrated circuit (IC) provide a high-Q passive resonator. Deep trenches within the bulk Si substrate in directions are expanded by wet etching to form contiguous cavities, which are filled by Si oxide to form a dielectric region. The dielectric region enhances the quality (Q) of an overlying passive resonator, formed in metallization layers of the mixed-signal IC.
Public/Granted literature
- US20150357295A1 DIELECTRIC REGION IN A BULK SILICON SUBSTRATE PROVIDING A HIGH-Q PASSIVE RESONATOR Public/Granted day:2015-12-10
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