发明授权
US09437597B2 Static random access memory (SRAM) device with FinFET transistors
有权
具有FinFET晶体管的静态随机存取存储器（SRAM）器件
- 专利标题： Static random access memory (SRAM) device with FinFET transistors
- 专利标题（中）： 具有FinFET晶体管的静态随机存取存储器（SRAM）器件
-
申请号： US15013902申请日： 2016-02-02
-
公开(公告)号： US09437597B2公开(公告)日： 2016-09-06
- 发明人: Mieno Fumitake
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation
- 申请人地址： CN Shanghai
- 专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人地址： CN Shanghai
- 代理机构： Anova Law Group, PLLC
- 优先权： CN201410172511 20140425
- 主分类号： H01L27/11
- IPC分类号： H01L27/11 ; H01L27/092
摘要：
The present disclosure provides a static memory cell and fabrication method. A first fin part is formed on a semiconductor substrate. An isolation layer is formed to cover a lower portion of sidewalls of the first fin part. A first dummy gate structure is formed across the first fin part. A dielectric layer is formed on the isolation layer. A mask layer is formed on the dielectric layer with a first opening to expose the top surface of the first dummy gate structure. The first dummy gate structure is removed through the first opening to form a first trench exposing the first fin part. A portion of the isolation layer is removed through the first opening to form a second trench exposing a portion of sidewalls of the first fin part below the top surface of the isolation layer. A first gate structure is formed by filling up the first and the second trenches.
公开/授权文献
- US20160155746A1 STATIC MEMORY CELL 公开/授权日：2016-06-02
信息查询
IPC分类:
