发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13967492申请日： 2013-08-15
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公开(公告)号： US09437607B2公开(公告)日： 2016-09-06
- 发明人: Kwangmin Park , Byongju Kim , Jumi Yun , Jaeyoung Ahn
- 申请人： Kwangmin Park , Byongju Kim , Jumi Yun , Jaeyoung Ahn
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2012-0100517 20120911
- 主分类号： H01L21/8239
- IPC分类号： H01L21/8239 ; H01L21/8247 ; H01L27/115 ; H01L29/423 ; H01L29/788 ; H01L29/792
摘要：
A semiconductor device has a vertical channel and includes a first tunnel insulating layer adjacent to a blocking insulating layer, a third tunnel insulating layer adjacent to a channel pillar, and a second tunnel insulating layer between the first and third tunnel insulating layers. The energy band gap of the third tunnel insulating layer is smaller than that of the first tunnel insulating layer and is larger than that of the second tunnel insulating layer.
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