Invention Grant
US09437624B2 Thin film transistor substrate, display apparatus comprising the same, method of manufacturing thin film transistor substrate, and method of manufacturing display apparatus
有权
薄膜晶体管基板，包括该薄膜晶体管基板的显示装置，制造薄膜晶体管基板的方法以及制造显示装置的方法
- Patent Title: Thin film transistor substrate, display apparatus comprising the same, method of manufacturing thin film transistor substrate, and method of manufacturing display apparatus
- Patent Title (中): 薄膜晶体管基板，包括该薄膜晶体管基板的显示装置，制造薄膜晶体管基板的方法以及制造显示装置的方法
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Application No.: US14689927Application Date: 2015-04-17
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Publication No.: US09437624B2Publication Date: 2016-09-06
- Inventor: Myounggeun Cha , Dongjo Kim , Yoonho Khang , Myounghwa Kim , Kyoungwon Lee
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2014-0130337 20140929
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L27/12 ; H01L29/786 ; H01L29/66
Abstract:
A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes.
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