发明授权
- 专利标题： Method of forming nanowires
- 专利标题（中）： 形成纳米线的方法
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申请号： US14505631申请日： 2014-10-03
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公开(公告)号： US09437699B2公开(公告)日： 2016-09-06
- 发明人: Yu-Lien Huang , Yung-Ta Li , Meng-Ku Chen
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jones Day
- 主分类号： H01L21/335
- IPC分类号： H01L21/335 ; H01L29/423 ; H01L29/78 ; H01L29/06 ; H01L21/3065 ; H01L21/02
摘要：
According to another embodiment, a semiconductor structure is provided. The structure includes: a substrate; a first nanowire over the substrate; and a second nanowire over the substrate and substantially symmetric with the first nanowire.
公开/授权文献
- US20160099328A1 METHOD OF FORMING NANOWIRES 公开/授权日：2016-04-07
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