发明授权
US09440312B2 Laser ablation process for manufacturing submounts for laser diode and laser diode units
有权
用于制造激光二极管和激光二极管单元的基座的激光烧蚀工艺
- 专利标题: Laser ablation process for manufacturing submounts for laser diode and laser diode units
- 专利标题(中): 用于制造激光二极管和激光二极管单元的基座的激光烧蚀工艺
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申请号: US13904174申请日: 2013-05-29
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公开(公告)号: US09440312B2公开(公告)日: 2016-09-13
- 发明人: Alexander Ovtchinnikov , Igor Berishev , Alexey Komissarov , Svletan Todorov , Pavel Trubenko
- 申请人: Alexander Ovtchinnikov , Igor Berishev , Alexey Komissarov , Svletan Todorov , Pavel Trubenko
- 申请人地址: US MA Oxford
- 专利权人: IPG PHOTONICS CORPORATION
- 当前专利权人: IPG PHOTONICS CORPORATION
- 当前专利权人地址: US MA Oxford
- 代理商 Yuri Kateshov, Esq.; Timothy J. King, Esq.
- 主分类号: B23K26/00
- IPC分类号: B23K26/00 ; B23K26/36 ; B23K26/40 ; H05K3/00 ; H01L23/00 ; H01S5/022
摘要:
A method for manufacturing submounts for laser diodes includes the steps of providing a base configured with a ceramic carrier and a metal layer deposited upon the substrate. The method further includes using a pulsed laser operative to generate a plurality of pulses which are selectively trained at predetermined pattern on the metal layer's surface so as to ablate the desired regions of the metal layer to the desired depth. Thereafter the base is divided into a plurality of submounts each supporting a laser diode. The metal layer includes a silver sub-layer deposited upon the ceramic and having a thickness sufficient to effectively facilitate heat dissipation.
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