Invention Grant
- Patent Title: Encapsulated microelectromechanical structure
- Patent Title (中): 封装的微机电结构
-
Application No.: US14961760Application Date: 2015-12-07
-
Publication No.: US09440845B2Publication Date: 2016-09-13
- Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
- Applicant: SiTime Corporation
- Applicant Address: US CA Sunnyvale
- Assignee: SiTime Corporation
- Current Assignee: SiTime Corporation
- Current Assignee Address: US CA Sunnyvale
- Agent Charles Shemwell
- Main IPC: H01L23/488
- IPC: H01L23/488 ; H01L23/051 ; B81B7/00 ; B81C1/00 ; H01L41/113
Abstract:
A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
Public/Granted literature
- US20160167950A1 ENCAPSULATED MICROELECTROMECHANICAL STRUCTURE Public/Granted day:2016-06-16
Information query
IPC分类:
