Invention Grant
US09442078B2 Scanning frequency comb microscopy (SFCM) for carrier profiling in semiconductors
有权
扫描频率梳显微镜(SFCM)用于半导体中的载体分布
- Patent Title: Scanning frequency comb microscopy (SFCM) for carrier profiling in semiconductors
- Patent Title (中): 扫描频率梳显微镜(SFCM)用于半导体中的载体分布
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Application No.: US14635828Application Date: 2015-03-02
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Publication No.: US09442078B2Publication Date: 2016-09-13
- Inventor: Mark J. Hagmann
- Applicant: Mark J. Hagmann
- Agency: Dobbin IP Law P.C.
- Agent Geoffrey E. Dobbin
- Main IPC: G01N22/00
- IPC: G01N22/00 ; G01Q60/14 ; G01Q60/10

Abstract:
A microwave frequency comb (MFC) is produced when a mode-locked ultrafast laser is focused on the tunneling junction of a scanning tunneling microscope (STM). The MFC consists of hundreds of measureable harmonics at integer multiples of the pulse repetition frequency of the laser, which are superimposed on the DC tunneling current. In Scanning Frequency Comb Microscopy (SFCM) the tip and/or sample electrode of the STM is moved vertically and laterally so that the power in the MFC may be measured at one or more locations on the surface of the sample and, from the power, carrier density, and other characteristics, of the sample may be calculated. SFCM is non-destructive of the sample. While many systems are possible to practice SFCM, a preferred apparatus is disclosed.
Public/Granted literature
- US20150247809A1 Scanning Frequency Comb Microscopy (SFCM) For Carrier Profiling in Semiconductors Public/Granted day:2015-09-03
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