Invention Grant
- Patent Title: Programmable power for a memory interface
- Patent Title (中): 用于存储器接口的可编程电源
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Application No.: US14298730Application Date: 2014-06-06
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Publication No.: US09443572B2Publication Date: 2016-09-13
- Inventor: Jan Christian Diffenderfer , Yuehchun Claire Cheng
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/4076 ; H03L7/08 ; G11C7/10 ; H03L7/081

Abstract:
Systems and methods for delay control are described herein. In one embodiment, a delay system comprises a first delay circuit configured to provide a voltage bias to a second delay circuit, wherein the voltage bias controls a delay of the second delay circuit, and to update the voltage bias at an update rate. The delay system also comprises an update controller configured to adjust the update rate of the first delay circuit. For example, the update controller may adjust the update rate based on timing requirements of a memory interface incorporating the delay system. The update rate may be reduced when the timing requirements are more relaxed to reduce power, and may be increased when the timing requirements are tighter.
Public/Granted literature
- US20150357017A1 PROGRAMMABLE POWER FOR A MEMORY INTERFACE Public/Granted day:2015-12-10
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