Invention Grant
- Patent Title: Focused ion beam low kV enhancement
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Application No.: US14803964Application Date: 2015-07-20
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Publication No.: US09443692B2Publication Date: 2016-09-13
- Inventor: Mostafa Maazouz
- Applicant: FEI Company
- Applicant Address: US OR Hillsboro
- Assignee: FEI Company
- Current Assignee: FEI Company
- Current Assignee Address: US OR Hillsboro
- Agency: Scheinberg & Associates, P.C.
- Agent John E. Hillert; Michael O. Scheinberg
- Main IPC: H01J3/14
- IPC: H01J3/14 ; H01J37/07 ; H01J37/21 ; H01J37/10 ; H01J37/04 ; H01J37/305 ; H01J3/02 ; H01J37/06 ; H01J37/147 ; H01J37/248

Abstract:
The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.
Public/Granted literature
- US20150325403A1 FOCUSED ION BEAM LOW KV ENHANCEMENT Public/Granted day:2015-11-12
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