Invention Grant
- Patent Title: Cavity bridge connection for die split architecture
- Patent Title (中): 用于芯片分割架构的腔桥连接
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Application No.: US14673435Application Date: 2015-03-30
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Publication No.: US09443824B1Publication Date: 2016-09-13
- Inventor: Hong Bok We , Jae Sik Lee , Dong Wook Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L25/065 ; H01L23/498 ; H01L23/00 ; H01L21/56

Abstract:
An integrated circuit (IC) package structure may include a substrate. The substrate may include a semiconductor bridge having a first surface directly on a surface of the substrate that faces a first semiconductor die and a second semiconductor die. The semiconductor bridge may be disposed within a cavity extending through a photo-sensitive layer on the surface of the substrate. The semiconductor bridge may have an exposed, second surface substantially flush with the photo-sensitive layer. The first semiconductor die and the second semiconductor die are supported by the substrate and coupled together through the semiconductor bridge.
Public/Granted literature
- US20160293572A1 CAVITY BRIDGE CONNECTION FOR DIE SPLIT ARCHITECTURE Public/Granted day:2016-10-06
Information query
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