发明授权
- 专利标题： Select gates with select gate dielectric first
- 专利标题（中）： 首先选择具有选择栅极电介质的栅极
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申请号： US14808463申请日： 2015-07-24
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公开(公告)号： US09443862B1公开(公告)日： 2016-09-13
- 发明人: Dai Iwata , Yusuke Yoshida , Kazutaka Yoshizawa
- 申请人： SanDisk Technologies, Inc.
- 申请人地址： US TX Plano
- 专利权人： SanDisk Technologies LLC
- 当前专利权人： SanDisk Technologies LLC
- 当前专利权人地址： US TX Plano
- 代理机构： Davis Wright Tremaine LLP
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L27/115 ; H01L21/28 ; H01L29/788 ; H01L29/66 ; H01L29/423
摘要：
A NAND flash memory includes a select transistor having a first region formed of a stack of layers on the substrate surface, and a second region that includes an opening through an interpoly dielectric layer, floating gate layer, and tunnel dielectric layer, the opening separated from the substrate surface by a select gate dielectric on the substrate surface, the opening filled by a control gate layer.
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