Invention Grant
- Patent Title: Thin film transistor substrate and the method thereof
- Patent Title (中): 薄膜晶体管基板及其制造方法
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Application No.: US14518278Application Date: 2014-10-20
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Publication No.: US09443881B2Publication Date: 2016-09-13
- Inventor: Jean-Ho Song , Shin-Il Choi , Sun-Young Hong , Shi-Yul Kim , Ki-Yeup Lee , Jae-Hyoung Youn , Sung-Ryul Kim , O-Sung Seo , Yang-Ho Bae , Jong-Hyun Choung , Dong-Ju Yang , Bong-Kyun Kim , Hwa-Yeul Oh , Pil-Soon Hong , Byeong-Beom Kim , Je-Hyeong Park , Yu-Gwang Jeong , Jong-In Kim , Nam-Seok Suh
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2009-0119992 20091204
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L27/12 ; H01L29/423 ; H01L29/45 ; H01L29/786

Abstract:
A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.
Public/Granted literature
- US20150053984A1 THIN FILM TRANSISTOR SUBSTRATE AND THE METHOD THEREOF Public/Granted day:2015-02-26
Information query
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