Invention Grant
- Patent Title: Thin film transistor substrate and method of fabricating the same
- Patent Title (中): 薄膜晶体管基板及其制造方法
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Application No.: US14846314Application Date: 2015-09-04
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Publication No.: US09443886B2Publication Date: 2016-09-13
- Inventor: Kum-Mi Oh , Jung-Il Lee
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2014-0119098 20140905
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/12
Abstract:
A thin film transistor substrate according to an embodiment includes a data line and a light barrier film to overlap an active layer of a thin film transistor, wherein the data line and the light barrier film are formed simultaneously, thereby reducing the cost of fabricating the thin film transistor substrate.
Public/Granted literature
- US20160071891A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME Public/Granted day:2016-03-10
Information query
IPC分类:
