Invention Grant
- Patent Title: Semiconductor device having gate-all-around transistor and method of manufacturing the same
- Patent Title (中): 具有栅极全绕晶体管的半导体器件及其制造方法
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Application No.: US14330305Application Date: 2014-07-14
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Publication No.: US09443978B2Publication Date: 2016-09-13
- Inventor: Dong-Il Bae , Kang-Ill Seo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC.
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L29/78 ; H01L27/088 ; H01L27/092 ; H01L29/66 ; H01L27/11
Abstract:
A semiconductor device includes a fin structure disposed on a substrate, a sacrificial layer pattern disposed on the fin structure, an active layer pattern disposed on the sacrificial layer pattern, and a gate dielectric layer and a gate electrode layer extending through the sacrificial layer pattern and surrounding a portion of the active layer pattern.
Public/Granted literature
- US20160013309A1 SEMICONDUCTOR DEVICE HAVING GATE-ALL-AROUND TRANSISTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-01-14
Information query
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