High performance gate drives and methods for driving semiconductor switching elements, such as insulated gate bipolar transistors (IGBTs), are provided. The gate drive can control the voltage applied to the gate of the IGBT to one or more intermediate voltages near the threshold voltage of the IGBT to control dv/dt of the collector-emitter voltage during and the di/dt of the collector current turn off. For instance, a voltage level between the turn on voltage and the turn off voltage can be applied for a first time period to control dv/dt of the collector-emitter voltage and di/dt of the collector current during turn off. Another voltage level between the turn on voltage and the turn off voltage can be applied for a second time period during reverse recovery of a freewheeling diode coupled in parallel with the IGBT.