Invention Grant
- Patent Title: Torn write mitigation
- Patent Title (中): 撕破写缓解
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Application No.: US13961755Application Date: 2013-08-07
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Publication No.: US09448896B2Publication Date: 2016-09-20
- Inventor: Mark Allen Gaertner , Jon Trantham , Vidya Krishnamurthy , Steve Faulhaber , Yong Yang
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hollingsworth Davis, LLC
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/16 ; G06F11/14 ; G06F11/20

Abstract:
Torn write mitigation circuitry determines if a write operation to memory is in progress at or about a time of power loss. In response to the write operation being in progress at or about the time of the power loss, the torn write mitigation circuitry causes torn write data and metadata to be stored to a non-volatile cache. The torn write data comprise data left in a degraded or uncorrectable state as a result of the loss of power. The metadata describe the torn write data.
Public/Granted literature
- US20150046747A1 TORN WRITE MITIGATION Public/Granted day:2015-02-12
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