Invention Grant
US09449703B1 Systems and methods for driving a control gate with a select gate signal in a split-gate nonvolatile memory cell
有权
用于在分闸非易失性存储单元中用选择栅极信号驱动控制栅极的系统和方法
- Patent Title: Systems and methods for driving a control gate with a select gate signal in a split-gate nonvolatile memory cell
- Patent Title (中): 用于在分闸非易失性存储单元中用选择栅极信号驱动控制栅极的系统和方法
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Application No.: US14734736Application Date: 2015-06-09
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Publication No.: US09449703B1Publication Date: 2016-09-20
- Inventor: Anirban Roy , Jon S. Choy
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/08 ; G11C5/14 ; G11C16/30
Abstract:
A nonvolatile memory includes a memory array having a plurality of memory cells, a select gate driver configured to provide a select gate voltage to a select gate of a first memory cell of the plurality of memory cells, and a control gate driver configured to use the select gate voltage to provide a control gate voltage to a control gate of a second memory cell of the plurality of memory cells.
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