Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing the same
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Application No.: US14586048Application Date: 2014-12-30
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Publication No.: US09449817B2Publication Date: 2016-09-20
- Inventor: Young-jo Tak , Jae-won Lee , Young-soo Park , Jun-youn Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0093923 20100928
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; H01L33/00 ; H01L33/12 ; H01L33/32
Abstract:
A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one inter layer is on the at least one masking layer.
Public/Granted literature
- US20150118800A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2015-04-30
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