Invention Grant
US09449876B2 Singulation of semiconductor dies with contact metallization by electrical discharge machining
有权
通过放电加工对具有接触金属化的半导体管芯进行分割
- Patent Title: Singulation of semiconductor dies with contact metallization by electrical discharge machining
- Patent Title (中): 通过放电加工对具有接触金属化的半导体管芯进行分割
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Application No.: US14158398Application Date: 2014-01-17
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Publication No.: US09449876B2Publication Date: 2016-09-20
- Inventor: Michael Roesner , Gudrun Stranzl , Manfred Schneegans
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/78 ; H01L21/66 ; H01L23/00 ; B23H1/00 ; B23H9/00
Abstract:
A method of separating individual dies of a semiconductor wafer includes forming a metal layer on a first surface of a semiconductor wafer, the semiconductor wafer including a plurality of dies, separating the plurality of dies from one another, and electrical discharge machining the metal layer into individual segments each of which remains attached to one of the dies. A corresponding semiconductor die produced by such a method is also provided.
Public/Granted literature
- US20150206802A1 Singulation of Semiconductor Dies with Contact Metallization by Electrical Discharge Machining Public/Granted day:2015-07-23
Information query
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