Invention Grant
US09449906B2 Devices, systems, and methods related to forming through-substrate vias with sacrificial plugs
有权
与牺牲插头形成贯穿衬底通孔相关的器件，系统和方法
- Patent Title: Devices, systems, and methods related to forming through-substrate vias with sacrificial plugs
- Patent Title (中): 与牺牲插头形成贯穿衬底通孔相关的器件，系统和方法
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Application No.: US14514184Application Date: 2014-10-14
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Publication No.: US09449906B2Publication Date: 2016-09-20
- Inventor: Kyle K. Kirby , Kunal R. Parekh
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/48 ; H01L21/768 ; H01L23/00
Abstract:
Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming one or more openings in a front side of the semiconductor device and forming sacrificial plugs in the openings that partially fill the openings. The method further includes further filling the partially filled openings with a conductive material, where individual sacrificial plugs are generally between the conductive material and a substrate of the semiconductor device. The sacrificial plugs are exposed at a backside of the semiconductor device. Contact regions can be formed at the backside by removing the sacrificial plugs.
Public/Granted literature
- US20150028476A1 DEVICES, SYSTEMS, AND METHODS RELATED TO FORMING THROUGH-SUBSTRATE VIAS WITH SACRIFICIAL PLUGS Public/Granted day:2015-01-29
Information query
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