Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14263119Application Date: 2014-04-28
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Publication No.: US09449973B2Publication Date: 2016-09-20
- Inventor: Han-jin Lim , Kong-soo Lee , Seok-woo Nam , Dong-chan Kim , Soo-jin Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Geyonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Geyonggi-do
- Agency: Harness, Dickey & Pierce P.L.C
- Priority: KR10-2013-0106821 20130905
- Main IPC: G11C7/10
- IPC: G11C7/10 ; H01L27/092 ; H01L27/06 ; G11C11/4091 ; G11C7/06 ; H01L27/11

Abstract:
A semiconductor device includes a substrate; a first inverter disposed on the substrate and receiving a voltage from any one of a bit line and a complementary bit line; a semiconductor layer disposed on the first inverter; and first and third switch devices disposed on the semiconductor layer and adjusting a threshold voltage of the first inverter to a voltage level of any one of the bit line and the complementary bit line.
Public/Granted literature
- US20150060862A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-03-05
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