Invention Grant
- Patent Title: Semiconductor structure with fin structure and wire structure and method for forming the same
- Patent Title (中): 具有翅片结构和线结构的半导体结构及其形成方法
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Application No.: US14592089Application Date: 2015-01-08
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Publication No.: US09450046B2Publication Date: 2016-09-20
- Inventor: Tsung-Yao Wen , Sai-Hooi Yeong , Bo-Yu Lai , Sheng-Chen Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L29/423 ; H01L29/10 ; H01L21/02
Abstract:
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a fin structure formed over the substrate. The semiconductor structure further includes a first wire structure formed over the fin structure and a source structure and a drain structure formed at two opposite sides of the fin structure. The semiconductor structure further includes a gate structure formed over the fin structure. In addition, the fin structure and the first wire structure are separated by the gate structure.
Public/Granted literature
- US20160204195A1 SEMICONDUCTOR STRUCTURE WITH FIN STRUCTURE AND WIRE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2016-07-14
Information query
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